DMN2400UFB4
1.2
1.0
2.0
1.6
0.8
0.6
I D = 250μA
I D = 1mA
1.2
T A = 25°C
0.8
0.4
0.2
0.4
0
-50
-25
0 25 50 75 100 125 150
0
0
0.2
0.4 0.6 0.8 1.0
1.2
T A , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
60
1,000
V SD , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
50
40
f = 1MHz
100
T A = 150°C
T A = 125°C
C iss
30
T A = 85°C
20
10
T A = -55°C
T A = 25°C
10
C oss
0
0
C rss
5 10 15
20
1
2
4
6 8 10 12 14 16 18 20
100,000
10,000
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
T A = 150°C
100,000
10,000
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
T A = 150°C
1,000
100
T A = 85°C
T A = 125°C
1,000
100
T A = 85°C
T A = 125°C
T A = 25°C
T A = -55°C
T A = 25°C
10
10
T A = -55°C
1
2
4
6 8 10 12
1
2
4 6 8 10 12
V GS , GATE-SOURCE VOLTAGE (V)
Fig. 11 Typical Gate-Source Leakage Current
vs. Gate-Source Voltage
V GS , GATE-SOURCE VOLTAGE (V)
Fig. 12 Typical Gate-Source Leakage Current
vs. Gate-Source Voltage
DMN2400UFB4
Document number: DS32025 Rev. 5 - 2
4 of 6
www.diodes.com
February 2011
? Diodes Incorporated
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